Enhanced outdiffusion in ion implanted silicon
نویسندگان
چکیده
منابع مشابه
DIFFUSION OF SILICON IN ION IMPLANTED GaAs
Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
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Implantation of 1.0 MeV ‘isIn in Si results in secondary-defect formation during subsequent 900 “C annealing if the total number of displaced Si atoms is greater than 1.6~ lOi’/ cm’, achieved with a dose near 1.5 X 10i3/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to rem...
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Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron...
متن کاملVacancy and interstitial depth profiles in ion-implanted silicon
An experimental method of studying shifts between concentration-versus-depth profiles of vacancyand interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by t...
متن کاملDiffusion of ion implanted boron in preamorphized silicon
Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry �SIMS� and transmission electron microscopy �TEM�. A comparison of 4 keV, 1� 1014/cm2 boron implants into crystalline and Ge preamorphized silicon was undertaken. Upon annealing the B implant into crystalline material exhibited the well-known transient enhanced diffu...
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ژورنال
عنوان ژورنال: Physics Letters A
سال: 1970
ISSN: 0375-9601
DOI: 10.1016/0375-9601(70)91000-5